Kioxia has begun sampling its next-generation UFS 4.1 embedded memory devices. Built with the company’s eighth-generation BiCS FLASH 3D NAND and a major architectural upgrade known as CBA (CMOS Bonded to Array), the new chips are designed for high-performance mobile and AI-centric devices.
UFS, or Universal Flash Storage, version 4.1 is the latest JEDEC standard and delivers faster speeds and improved power efficiency for applications like smartphones, tablets, and embedded Linux systems. Kioxia’s implementation introduces CBA technology, which directly bonds the CMOS control logic to the memory array. That design change reduces latency, lowers power consumption, and increases performance density within a compact BGA package.
The company’s new lineup includes 256GB, 512GB, and 1TB capacities. Compared to the previous generation, random read speeds improve by up to 45 percent, and random write performance increases by approximately 30 percent. Power efficiency has also improved, with write operations becoming about 20 percent more efficient and reads improving by 15 percent.
Additional features include host-initiated defragmentation, which delays garbage collection to maintain smooth performance during demanding tasks. WriteBooster buffer resizing allows for more flexible tuning of storage behavior, and the 1TB model comes in a reduced package height to save space in compact device designs.
These UFS modules are aimed primarily at upcoming smartphones, but they may also appear in Linux-powered handhelds, embedded AI devices, or custom Android builds that prioritize fast and efficient storage.
Sampling is underway now, and Kioxia is expected to bring these UFS 4.1 modules to market in the near future.
